About
Process engineer for GaAs semiconductor devices, emphasis in thin film…
Experience
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Education
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Texas A&M University
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Thesis: "Light Sensing Performance of Amorphous Silicon pin Diodes: Structure, Incident Light, and Plasma Deposition Effects"
Dr. Yue Kuo Research Group (TAMU): 2014-2017
• Designed, fabricated, and analyzed thin film semiconductor devices.
• Designed experiments to optimize thin film light sensor design and maximize light absorption across desired light spectra based on fabrication process parameters.
• Semiconductor processing apparatus experience: plasma-enhanced chemical…Thesis: "Light Sensing Performance of Amorphous Silicon pin Diodes: Structure, Incident Light, and Plasma Deposition Effects"
Dr. Yue Kuo Research Group (TAMU): 2014-2017
• Designed, fabricated, and analyzed thin film semiconductor devices.
• Designed experiments to optimize thin film light sensor design and maximize light absorption across desired light spectra based on fabrication process parameters.
• Semiconductor processing apparatus experience: plasma-enhanced chemical vapor deposition (PECVD), reactive ion etching (RIE), photolithography, profilometry, temperature/humidity chamber testing, and scanning electron microscopy (SEM).
• Extensive class 100 clean room experience.
• Software experience: MATLAB, Microsoft Office
• Coordinated vendor outreach for the requisition of precursor materials and maintenance of equipment.
• Published and presented research to Electrochemical Society symposia. -
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Publications
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Light Sensing Performance of Amorphous Silicon Thin Film PIN Diodes: Structure, Incident Light, and Plasma Deposition Effects
Texas A&M University
See publicationThe performance of the amorphous silicon a-Si:H pin diode with respect to the wavelength, the incident direction, and the absorption of the light has been studied. Three types of LED lights, i.e., red, green, or blue, were used as the incident lights. The aluminum film was deposited above or below of the ITO electrode as the light reflector. The diode was exposed to through the p+ or n+ layer. The external quantum efficiency was used as the reference to determine the performance.
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Effect of n+ Layer Deposition Power on Light Sensing of Amorphous Silicon pin Diodes
ECS Trans.
See publicationThe effect of the plasma-enhanced chemical vapor deposition power of the phosphorus-doped n+ layer on the performance of the hydrogenated amorphous silicon pin diode for the light sensing, i.e., under solar, red, green, and blue light exposures, has been investigated. With all other deposition parameters fixed, the plasma power influenced the n+ film deposition rate, resistivity, and defects, which are critical to the light sensing characteristics. The optimized n+ layer deposition power for…
The effect of the plasma-enhanced chemical vapor deposition power of the phosphorus-doped n+ layer on the performance of the hydrogenated amorphous silicon pin diode for the light sensing, i.e., under solar, red, green, and blue light exposures, has been investigated. With all other deposition parameters fixed, the plasma power influenced the n+ film deposition rate, resistivity, and defects, which are critical to the light sensing characteristics. The optimized n+ layer deposition power for the light sensing, i.e., based on the external quantum efficiency, has been identified and discussed.
Languages
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English
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Mandarin
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Organizations
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American Institute of Chemical Engineers
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The Electrochemical Society
Student Member
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